1 jun-09-2006 n-channel enhancement mode field effect transistor P1308ATG to-220 lead free niko-sem absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol limits units gate-source voltage v gs 20 v t c = 25 c 80 continuous drain current t c = 100 c i d 55 pulsed drain current 1 i dm 250 avalanche current i ar 40 a avalanche energy l = 0.55mh e as 400 repetitive avalanche energy 2 l = 0.1mh e ar 20 mj t c = 25 c 192 power dissipation t c = 100 c p d 76 w operating junction & storage temperature range t j , t stg -55 to 150 lead temperature ( 1 / 16 ? from case for 10 sec.) t l 275 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-case r jc 0.65 junction-to-ambient r ja 62.5 case-to-heatsink r cs 0.5 c / w 1 pulse width limited by maximum junction temperature. 2 duty cycle 1 electrical characteristics (t c = 25 c, unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0v, i d = 250 a 75 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.3 4.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 250 na v ds = 60v, v gs = 0v 1 zero gate voltage drain current i dss v ds = 60v, v gs = 0v, t j = 125 c 10 a 1. gate 2. drain 3. source product summary v (br)dss r ds(on) i d 75 13m ? 80a g d s
2 jun-09-2006 n-channel enhancement mode field effect transistor P1308ATG to-220 lead free niko-sem on-state drain current 1 i d(on) v ds = 10v, v gs = 10v 60 a drain-source on-state resistance 1 r ds(on) v gs = 10v, i d = 40a 10.5 13 m ? forward transconductance 1 g fs v ds = 50v, i d = 40a 38 s dynamic input capacitance c iss 3820 output capacitance c oss 610 reverse transfer capacitance c rss v gs = 0v, v ds = 25v, f = 1mhz 130 pf total gate charge 2 q g 160 gate-source charge 2 q gs 30 gate-drain charge 2 q gd v ds =60v, v gs = 10v, i d = 40a 55 nc turn-on delay time 2 t d(on) 15 rise time 2 t r v dd = 40v, 65 turn-off delay time 2 t d(off) i d ? 40a, v gs = 10v, r gs = 2.5 ? 50 fall time 2 t f 50 ns source-drain diode ratin gs and characteristics (t c = 25 c) continuous current i s 80 pulsed current 3 i sm 250 a forward voltage 1 v sd i f = 40a, v gs = 0v 1.3 v reverse recovery time t rr 100 ns peak reverse recovery current i rm(rec) i f = i s , dl f /dt = 100a / s 200 a reverse recovery charge q rr 410 nc 1 pulse test : pulse width 300 sec, duty cycle 2 . 2 independent of operating temperature. 3 pulse width limited by maximum junction temperature. remark: the product marked with ?P1308ATG?, date code or lot # orders for parts with lead-free plating can be placed using the pxxxxxxg parts name.
3 jun-09-2006 n-channel enhancement mode field effect transistor P1308ATG to-220 lead free niko-sem typical output characteristics i d , drain-to-source current(a) v ds , drain-to-source voltage(v) v gs =4.5v 1000 100 10 100 10 1 0.1 8.0v 7.0v 6.0v 5.5v 5.0v 10v i d , drain-to-source current(a) 1000 100 10 4.0 5.0 6.0 7.0 8.0 9.0 typical transfer characteristics t j =25c v ds = 25v v gs , gate-to-source voltage(v) v gs = 10v i d = 40a 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature(c) normalized on-resistance vs.temperature r ds(on) , normalized drain-to-source on resistance 0 1000 2000 3000 4000 5000 6000 7000 v gs = 0v, f=1 mhz ciss coss crss 1 10 100 c, capacitance(pf) capacitance-characteristics v ds , drain-to-source voltage(v) v ds = 60v v ds = 37v v ds = 15v i d = 40a 0 20 15 12 8 4 0 40 120 q g , total gate charge (nc) v gs , gate-to-source voltage(v) typical gate charge vs. gate-to-source voltage 80 160 t j =25c v gs = 0v t j =150c 1000 100 10 1 0.1 0.0 0.4 0.8 1.2 2.0 2.4 v sd , source-to-drain voltage(v) i sd , rrverse drain current(a) typical source-drain diode forward voltage 1.6
4 jun-09-2006 n-channel enhancement mode field effect transistor P1308ATG to-220 lead free niko-sem v ds , drain-to-source voltage(v) 1 10 100 1000 1 10 100 1000 i d , drain-to-source current(a) operation in this area limted by r ds (on) 100 ? sec 1msec 10msec maximum safe operating area tc=25c r jc =0.65c/w sing pulse 0.00001 0.01 r (t) , normalized effctive transient thermal resistance 0.1 1 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration(sec) single pulse p (pk) t1 t2 transient thermal respence curre d=0.5 0.2 0.1 0.05 0.02 0.01 notes: 1.r jc (t)=r(t)*r 2.r jc =0.65 c/w 3.t j +tc=p*r jc (t) 4.duty cycle, d=t1/t2
5 jun-09-2006 n-channel enhancement mode field effect transistor P1308ATG to-220 lead free niko-sem to-220 (3-lead) mechanical data mm mm dimension min. typ. max. dimension min. typ. max. a 9.78 10.16 10.54 h 2.4 2.54 2.68 b 2.61 2.74 2.87 i 1.19 1.27 1.35 c 20 j 4.4 4.6 4.8 d 28.5 28.9 29.3 k 1.14 1.27 1.4 e 14.6 15.0 15.4 l 2.3 2.6 2.9 f 8.4 8.8 9.2 m 0.26 0.46 0.66 g 0.72 0.8 0.88 n 7
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